document number: 83609 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.6, 10-dec-08 283 optocoupler, photodarlington output, high gain, with base connection h11b1, h11b2, h11b3 vishay semiconductors description the h11b1, h11b2, h11b 3 are industry standard optocouplers, consisting of a gallium arsenide infrared led and a silicon photodarlington. features ? isolation test voltage: 5300 v rms ? coupling capacitance, 0.5 pf ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ? ul1577, file no. e52744 system code j ? din en 60747-5-5 (vde 0884) available with option 1 note for additional information on the availabl e options refer to option information. i179005 1 2 3 6 5 4 b c e a c n c order information part remarks h11b1 ctr > 500 %, dip-6 h11b2 ctr > 200 %, dip-6 h11b3 ctr > 100 %, dip-6 h11b1-x007 ctr > 500 %, smd-6 (option 7) h11b1-x009 ctr > 500 %, smd-6 (option 9) h11b2-x009 ctr > 200 %, smd-6 (option 9) absolute maximum ratings parameter test condition symbol value unit input reverse voltage v r 3v forward continuous current i f 60 ma power dissipation p diss 100 mw derate linearly from 25 c 1.33 mw/c output collector emitter breakdown voltage bv ceo 25 v emitter collector breakdown voltage bv eco 7v collector base breakdown voltage bv cbo 30 v collector current (continuous) i c 100 ma power dissipation p diss 150 mw derate linearly from 25 c 2mw/c
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83609 284 rev. 1.6, 10-dec-08 h11b1, h11b2, h11b3 vishay semiconductors optocoupler, photodarlington output, high gain, with base connection note t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximum ratings can cause permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to absolute ma ximum ratings for extended periods of the time c an adversely affect reliability. note t amb = 25 c, unless otherwise specified. minimum and maximum values were tested requierements. typical val ues are characteristic s of the device and are the result of en gineering evaluations. typical values are for information only and are not part of the testing requirements. coupler isolation test voltage between emitter and detector v iso 5300 v rms creepage distance 7mm clearance distance 7mm comparative tracking index per din iec 112/vde 0303, part 1 cti 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 total package dissipation (led plus detector) p tot 260 mw derate linearly from 25 c 3.5 mw/c storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c lead soldering time at 260 c 10 s electrical characteristcs parameter test condition part symbol min. typ. max. unit input forward voltage i f = 50 ma h11b1 v f 1.1 1.5 v h11b2 v f 1.1 1.5 v i f = 10 ma h11b3 v f 1.1 1.5 v reverse current v r = 3 v i r 10 a junction capacitance v f = 0 v, f = 1 mhz c j 50 pf output collector emitter breakdown voltage i c = 1 ma, i f = 0 ma bv ceo 30 v emitter collector breakdown voltage i e = 100a, i f = 0 ma bv eco 7v collector base breakdown voltage i c = 100 a , i f = 0 ma bv cbo 30 v collector emitter leakage current v ce = 10 v, i f = 0 ma i ceo 100 na coupler saturation voltage collector-emitter i c = 1 ma, i c = 1 ma v cesat 1v capacitance (input to output) c io 0.5 pf current transfer ratio parameter test condition part symbol min. typ. max. unit dc current transfer ratio v ce = 5 v, i f = 1 ma h11b1 ctr dc 500 % h11b2 ctr dc 200 % h11b3 ctr dc 100 % absolute maximum ratings parameter test condition symbol value unit
document number: 83609 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.6, 10-dec-08 285 h11b1, h11b2, h11b3 optocoupler, photodarlington output, high gain, with base connection vishay semiconductors typical characteristics t amb = 25 c, unless otherwise specified fig. 1 - forward voltage vs. forward current fig. 2 - normalized non-saturated and saturated ctr ce vs. led current fig. 3 - normalized non-saturated and saturated i ce vs. led current fig. 4 - normalized non-saturat ed and saturated collector emitter current vs. led current switching characteristics parameter test condition symbol min. typ. max. unit switching times i f = 5 ma, v ce = 10 v, r l = 100 t on 5s t off 30 s ih11 b 1_01 i f - for w ard c u rrent (ma) 100 10 1 0.1 0.7 0. 8 0.9 1.0 1.1 1.2 1. 3 1.4 v f - for w ard v oltage ( v ) t a = - 55 c t a = 25 c t a = 100 c ih11 b 1_02 0.1 1 10 100 i f - led c u rrent (ma) n ctr ce - n ormalized ctr ce 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v ce = 1 v v ce = 5 v n ormalized to: v ce = 5 v i f = 1 ma ih11 b 1_03 100 1 0.1 0.01 0.1 1 10 100 v ce = 1 v v ce = 5 v i f - led c u rrent (ma) n i ce - n ormalized i ce i f = 2 ma v ce = 5 v n ormalized to: 10 ih11 b 1_04 100 1 0.1 0.001 0.01 0.1 1 10 v ce = 1 v v ce = 5 v i f - led c u rrent (ma) n i ce - n ormalized i f = 10 ma v ce = 5 v n ormalized to: 10
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83609 286 rev. 1.6, 10-dec-08 h11b1, h11b2, h11b3 vishay semiconductors optocoupler, photodarlington output, high gain, with base connection fig. 5 - non-saturated and saturated h fe vs. base current fig. 6 - low to high propagation delay vs. collector load resistance and led current fig. 7 - high to low propagation delay vs. collector load resistance and led current fig. 8 - switching waveform fig. 9 - switching schematic ih11 b 1_05 0.01 0.1 1 10 100 0 2000 4000 6000 8 000 10 000 v ce = 5 v v ce = 1 v i b - base c u rrent ( a) h fe - for w ard transfer gain ih11 b 1_06 0101520 0 20 40 60 8 0 v cc = 5 v v th = 1.5 v 470 i f - led c u rrent (ma) t plh - lo w /high propagation delay ( s) 100 1.0 k 5 220 ih11 b 1_07 0101520 0 5 10 15 20 100 1 k i f - led c u rrent (ma) t phl - high/lo w propagation delay ( s) v cc = 5 v v th = 1.5 v 5 ih11 b 1_0 8 i f t r v o t d t s t f t phl t plh v = 1.5 v th ih11 b 1_09 v o r l v cc = 10 v i f = 5 ma f = 10 khz, df = 50 %
document number: 83609 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.6, 10-dec-08 287 h11b1, h11b2, h11b3 optocoupler, photodarlington output, high gain, with base connection vishay semiconductors package dimensions in inches (millimeters) i17 8 004 0.010 (0.25) typ. 0.114 (2.90) 0.130 (3.0) 0.130 (3.30) 0.150 (3. 8 1) 0.031 (0. 8 0) min. 0.300 (7.62) typ. 0.031 (0. 8 0) 0.035 (0.90) 0.100 (2.54) typ. 0.039 (1.00) min. 0.01 8 (0.45) 0.022 (0.55) 0.04 8 0.022 (0.55) 0.24 8 (6.30) 0.256 (6.50) 0.335 ( 8 .50) 0.343 ( 8 .70) pin one id 6 5 4 1 2 3 1 8 3 to 9 0.300 to 0.347 (7.62 to 8 . 8 1) 4 typ. iso method a (0.45) 0.315 ( 8 .0) min. 0.300 (7.62) typ. 0.1 8 0 (4.6) 0.160 (4.1) 0.331 ( 8 .4) min. 0.406 (10.3) max. 0.02 8 (0.7) option 7 1 8 494 min. 0.315 ( 8 .00) 0.020 (0.51) 0.040 (1.02) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03) 0.012 (0.30) typ. 0.0040 (0.102) 0.009 8 (0.249) 15 max. option 9
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83609 288 rev. 1.6, 10-dec-08 h11b1, h11b2, h11b3 vishay semiconductors optocoupler, photodarlington output, high gain, with base connection ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national an d international stat utory requirements. 2. regularly and continuously improve the performance of ou r products, processes, distri bution and operating systems with respect to their impact on the health and safety of our employ ees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosp here which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london am endments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international in itiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of c ontinuous improvements to eliminat e the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applicat ions. all operating parameters must be validat ed for each customer application by the customer. should the buyer use vishay semi conductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damag es, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associat ed with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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